features 1 of 6 optimum technology matching? applied gaas hbt ingap hbt gaas mesfet sige bicmos si bicmos sige hbt gaas phemt si cmos si bjt gan hemt rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity?, powerstar?, polaris? total radio? and ultimateblue? are trademarks of rfmd, llc. bluetooth is a trade- mark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks and registered tradem arks are the property of their respective owners. ?2006, rf micro devices, inc. product description 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . inp hbt ldmos rf mems fms2014-001 high power gaas spdt switch the fms2014-001 is a low loss, high power, linear single-pole double-throw gallium arsenide antenna switch designed for use in mobile handset applications. the die is fabricated using the rfmd fl05 0.5 ? m switch process technology, which offers excellent performance optimised for switch applications. the fms2014-001 is designed for use in dual-, tri-, and q uad-band gsm handset antenna switch mod- ules and rf front end modules. it can also find use in other applications where high power and linear rf switching is necessary. v1 rf1 ant v2 rf2 ? excellent low control voltage performance ? excellent harmonic perfor- mance under gsm/dcs/pcs/edge power levels ? very high tx-rx isolation: >28db typ. at 1.8ghz ? very low insertion loss: 0.5db at 1.8ghz ? very low control current applications ? mobile handset applications ? dual-, tri-, and quad-band gsm handset antenna switch modules ? rf front end modules ds100730 ? package: 3mmx3mm qfn fms2014-001 high power gaas spdt switch parameter specification unit condition min. typ. max. electrical specifications t ambient =25c, v ctrl =0v/2.5v, z in =z out =50 ? external dc-blocking capacitors are required on all rf ports (typ. 700[f) insertion loss 0.45 0.5 db 0.5 ghz to 1.0ghz 0.5 0.55 db 1.0ghz to 2.0ghz return loss 16 20 db 0.5ghz to 2.5ghz isolation -30 -32 db 0.5ghz to 1.0ghz -26 -30 db 1.0ghz to 2.0ghz 2nd harmonic level -60 -70 dbc 1ghz, p in =+35dbm, 100% duty cycle -65 -75 dbc 2ghz, p in =+33dbm, 100% duty cycle 3rd harmonic level -60 -70 dbc 1ghz, p in =+35dbm, 100% duty cycle -65 -75 dbc 2ghz, p in =+33dbm, 100% duty cycle switching speed: t rise , t fall <0.3 1.0 ? s 10% to 90% rf and 90% to 10% rf switching speed: t on , t off <0.3 1.0 ? s 50% control to 90% rf and 50% control to 10% rf control current 5 10 ? a +35dbm rf input at 1ghz general test conditions bias voltages (low) 0 0.2 v bias voltages (high) 2.5 5 v port impedances 50 ? off arm termination 50 ?
2 of 6 ds100730 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . fms2014-001 typical measured performance on evaluation board (de-embedded) measurement conditions: v ctrl =2.5v (high) and 0v (low), t ambient =25 ? c unless otherwise stated. absolute maximum ratings 1 parameter rating unit maximum input power (p in ) +38 dbm control voltage (v ctrl )+5v operating temperature (t oper )-40 to 100c storage temperature (t stor ) -55 to 150 c truth table switch state vc1 vc2 ant - rf1 ant - rf2 a high low insertion loss isolation b low high isolation insertion loss caution! esd sensitive device. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. extended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical perfor- mance or functional operation of the devi ce under absolute maximum rating condi- tions is not implied. rohs status based on eudirective2002/95/ec (at time of this document revision). the information in this publication is believed to be accurate and reliable. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. 0.5 1 1.5 2 2.5 3 freq uency (g hz) fms2014qfn insertion loss -1 -0 .9 -0 .8 -0 .7 -0 .6 -0 .5 -0 .4 -0 .3 -0 .2 -0 .1 0 db 0. 5 1 1 .5 2 2.5 3 fre que ncy (ghz) fms 2014qfn isolation -35 -32.5 -30 -27.5 -25 -22.5 -20 db 0.5 1 1.5 2 2 .5 3 frequency (ghz) fms2014q fn return loss -40 -35 -30 -25 -20 -15 -10 -5 0 db ?
3 of 6 ds100730 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . fms2014-001 part identification pad layout package drawing qfn 12-lead 3mmx3mm pin description 1nc 2nc 3rf1 4nc 5nc 6nc 7rf2 8nc 9nc 10 v2 11 ant rf 12 v1 paddle ground 8 6 v1 3 4 5 12 pin 1 rf1 v2 rf2 a n t 2 7 9 10 11 paddle
4 of 6 ds100730 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . fms2014-001 evaluation board layout tape and reel tape and reel information on this material is in accordan ce with eia-481-1 except where exceptions are identified. bill of materials label component c3, c4 capacitor, 470pf, 0603 c1, c2, c7 capacitor, 100pf, 0402 c5, c6 capacitor, 47pf, 0402 board preferred evaluation board material is 0.25mm thick rogers rt4350. all rf tracks should be 50 ? characteristic impedance. c1 c2 c3 ? ?
5 of 6 ds100730 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . fms2014-001 preferred assembly instructions this package is compatible with both lead free and leaded solder reflow processes as defined within ipc/j-std-020c. the maximum package temperature should not exceed 260c. handling precautions to avoid damage to the devices, care should be exercised during handling. proper electro- static discharge (esd) precautions should be ob served at all stages of storage, handling, assembly, and testing. esd rating these devices should be treated as class 1a (250v to 500v) as defined in jedec standard no. 22-a114. further information on esd control measures can be found in mil-std-1686 and mil-hdbk-263. msl rating the device has an msl rating of level 1. to determine this ra ting, preconditioning was performed to the device per the pb-free solder profile defined within ipc/jedec j-std-020c, moisture/r eflow sensitivity classification for non-hermetic solid state. application notes and design data application notes and design data including s-parame ters are available on request from www.rfmd.com. reliability an mttf of 4.2 million hours at a channel temperature of 150c is achieved for the process used to manufacture this device. disclaimers this product is not designed for use in any sp ace-based or life-sustaining/supporting equipment. ordering information ordering code description fms2014-001 7?reel with 1000 pcs fms2014-001sr 7? reel with 100 pieces fms2014-001sq sample bag with 25 pcs fms2014-001-eb packaged die mounted on evaluation board
6 of 6 ds100730 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . fms2014-001
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